Abstract
A multilayer, low-parasitic interconnection scheme for highly scaled GaN high electron mobility transistors is reported. The fabrication process offers three Au interconnects embedded in benzocyclobutene (BCB) dielectric, with an integrated air-box in the active area in order to minimise the gate parasitic capacitances. With the addition of the air-box, it is demonstrated that the performance of the BCB encapsulated device is similar to that of a non-encapsulated device. Furthermore, by utilising the multilayer interconnection scheme a low-loss (0.75 dB) 3 dB tandem coupler operating from 140 to 220 GHz is demonstrated.
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