Abstract
A multilayer, low-parasitic interconnection scheme for highly scaled GaN high electron mobility transistors is reported. The fabrication process offers three Au interconnects embedded in benzocyclobutene (BCB) dielectric, with an integrated air-box in the active area in order to minimise the gate parasitic capacitances. With the addition of the air-box, it is demonstrated that the performance of the BCB encapsulated device is similar to that of a non-encapsulated device. Furthermore, by utilising the multilayer interconnection scheme a low-loss (0.75 dB) 3 dB tandem coupler operating from 140 to 220 GHz is demonstrated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.