Multilayer Fe3O4-doped ITO indium saving indium tin oxide thin films

Abstract

Multilayer Fe3O4-doped indium saving indium-tin oxide (ITO) thin films were fabricated by sputtering method. Double-layered Fe3O4-doped indium saving indium-tin oxide (ITO) thin films consisted of 12 nm layer of conventional indium tin oxide (90 mass% In2O3 and 10 mass% SnO2) and 138 nm layer of indium saving indium-tin oxide (50 mass% In2O3, 50 mass% SnO2 and Fe3O4-doped) were grown on preheated at 523 K glass substrates. Obtained polycrystalline ITO thin films exhibit volume resistivity of 416 µΩcm, electron mobility 28 cm2/V·s, carrier density 5.3 × 1020 cm−3 and average optical transmittance above 85% in visible range of spectrum.