Abstract
Abstract Chemical mechanical polishing (CMP) is a manufacturing process used to achieve required high levels of global and local planarity, which involves a combination of chemical erosion and mechanical action. The study on mechanical removal action of CMP with hydrodynamic lubrication involved will help us to get some insights into the mechanism of CMP and to solve the lubrication problem of CMP. In this paper, a full approach scheme of multigrid technique incorporated with line relaxation is introduced for accelerating the convergence. The effects of various parameters on load and moments are simulated and the results of computation are reported.
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