Abstract
The two-input exclusive-OR (XOR) function was implemented by a multigate single-electron transistor (SET). Two types of multigate SETs operating at 40 K were fabricated on a top silicon layer of an Si-on-insulator wafer by using a special technique called pattern-dependent oxidation. Two small gate electrodes which act as the input gates were formed over the small SET island. The output current of the devices took a high level when a high voltage was applied to either of the two gates with the other gate grounded, while it took a low level when both gates were grounded or fed with a high voltage. It is striking that such an XOR function can be implemented with just one device.
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