Multifunctionalities of 2D MoS2 self-switching diode as memristor and photodetector

Abstract

Self-switching diodes (SSD) were fabricated at the wafer level on a 2D few-layer MoS 2 thin film (7 monolayers) grown on a 4-inch Al 2 O 3 /high-resistivity silicon wafer via Chemical Vapor Deposition (CVD). We report here that MoS 2 behaves as a transparent piezoelectric material in the near infrared spectral region and as a strain-induced ferroelectric material with a measured d 33 piezoelectric coefficient of 3–10 pm/V depending on the applied AC voltage. Moreover, we demonstrate experimentally that the SSDs behave as lateral memristors and as photodetectors in the visible spectrum, with responsivities as high as 17 A/W.