Abstract
In this paper, a multifunctional terahertz (THz) absorber based on Dirac semimetal and vanadium dioxide (V O 2) is proposed. By modulating the temperature of V O 2, the absorber can be switched between the narrow band and wide band. When V O 2 is in the metallic state, the absorber has a broadband absorption effect with a bandwidth of approximately 4THz. It has the advantages of insensitivity to polarization and wide-angle absorption. When V O 2 is in the insulating state, the absorber has two absorption peaks with absorptivity exceeding 90% and sensitivities of 297.7 and 402GHz/RIU, and thus can be used as a highly sensitive sensor for cell detection. When the Fermi level of the Dirac semimetal is changed, the absorption characteristics can be modulated. The absorber has broad application prospects in multifunctional modulated devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
