Abstract
Emerging memory devices, that can provide programmable information recording with tunable resistive switching under external stimuli, hold great potential for applications in data storage, logic circuits, and artificial synapses. Realization of multifunctional manipulation within individual memory devices is particularly important in the More‐than‐Moore era, yet remains a challenge. Here, both rewritable and nonerasable memory are demonstrated in a single stimuli‐responsive polymer diode, based on a nanohole‐nanowrinkle bi‐interfacial structure. Such synergic nanostructure is constructed from interfacing a nanowrinkled bottom graphene electrode and top polymer matrix with nanoholes; and it can be easily prepared by spin coating, which is a low‐cost and high‐yield production method. Furthermore, the resulting device, with ternary and low‐power operation under varied external stimuli, can enable both reversible and irreversible biomimetic pressure recognition memories using a device‐to‐system framework. This work offers both a general guideline to fabricate multifunctional memory devices via interfacial nanostructure engineering and a smart information storage basis for future artificial intelligence.
Highlights
Emerging memory devices, that can provide programmable information and low energy operations in response to external or internal stimuli.[7,8] Stimulirecording with tunable resistive switching under external stimuli, hold great responsive resistive switching (RS) in twopotential for applications in data storage, logic circuits, and artificial synapses
Electrode with nanowrinkle height of ≈16 nm, as can be noticed in the left and right bottom parts of Figure 1b and the bottom part of Figure 1c. It is well-known that nanowrinkles play a crucial role in write-once-read-many times (WORM) memory, owing to the enhancement of localized field emission induced by the atomic thin edges of the nanowrinkles.[27]
To incorporate a nonvolatile repeatable switching mode into the same cell and, simultaneously, to diminish the effect of the random nature of the polymer memory (as the formation and the rupture of a conductive filament (CF) are two stages of a stochastic process that often occurs at the weakest locations of RS medium layer),[38] a semiconductive nh-MEH-PPV layer with uniformly distributed nanoholes was deposited via breath-figure method (Figure S1, Supporting Information).[39]
Summary
That can provide programmable information and low energy operations in response to external or internal stimuli.[7,8] Stimulirecording with tunable resistive switching under external stimuli, hold great responsive resistive switching (RS) in twopotential for applications in data storage, logic circuits, and artificial synapses.
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
