Multifunctional MoOx and MoOxNy films with 2.5 < x < 3.0 and y < 0.2 prepared using controlled reactive deep oscillation magnetron sputtering

Abstract

Reactive deep oscillation magnetron sputtering with a pulsed reactive gas flow control and to-substrate reactive gas injection into the high-density plasma in front of the sputtered Mo target was used for a low-temperature (< 120 °C) preparation of MoOx and MoOxNy films with 2.5 < x < 3.0 and y < 0.2. We explain the advantages of this deposition technique, allowing us to control smoothly and reproducibly the film composition and thus the film structure and properties. Special attention is paid to the strong effect of slightly decreasing x in MoOx films and slightly increasing y in MoOxNy films on their optical and electrical properties which are directly related to varying electronic structure of the films. We discuss possible applications of these films in the field of solar cells, organic electronic devices and lithium-ion batteries.