Abstract
We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires.CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors(104 devicesin a 25 mm2 area) are fabricated and we effectively demonstrate their enhanced performance.Furthermore, CuO nanowire exhibits high and fast response to CO gas at200 °C, which makes it a promising candidate for a poisonous gas sensing nanodevice.
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