Multifunction integration of junction-MOSFETs and nonvolatile FETs on a single 4H-SiC substrate for 300°C operation

Sang-Mo Koo Sang-Mo Koo,A Grishin,C.-M Zetterling,S Khartsev,M Ostling

doi:10.1109/iedm.2003.1269348

Multifunction integration of junction-MOSFETs and nonvolatile FETs on a single 4H-SiC substrate for 300°C operation

Sang-Mo Koo Sang-Mo Koo, A Grishin + Show 3 more

https://doi.org/10.1109/iedm.2003.1269348

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Publication Date: Jan 1, 2012

Citations: 1

Affiliation: KTH Royal Institute of Technology, National Institute of Standards and Technology

#Nonvolatile FETs #junction-MOSFETs + Show 8 more

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Abstract

A novel integration of junction-MOSFETs (JMOSFETs) and nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is presented. The SiC JMOSFET controls the drain current effectively from the buried junction gate, thereby allowing for a constant current level at elevated temperatures. The SiC NVFET has similar functions with nonvolatile memory capability due to its ferroelectric gate stack. This work is the first report on the integration of fully functional SiC JMOSFETs and NVFETs on the same substrate up to 300/spl deg/C.

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