Abstract
Based on a three-dimensional thermal-electrical model, non-uniform finger spacing power SiGe HBT was designed and fabricated. Experiment result shows that the peak temperature of non-uniform spacing SiGe HBT is Iowed by 22 K compared with that of uniform space HBT. For the same nonuniform spacing HBT, temperature non-uniformity among the fingers is improved obviously at different biases. The higher power dissipation PDC is, the better temperature improvement of non-uniform spacing HBT is. Because of the reducing of peak temperature, power SiGe HBTs with non-uniform Spacing can work at higher bias and has higher power handling capability.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.