Abstract
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low - power consumption in Magneto Electric – Spin Orbital logics [1] and Magnetic Random Access Memory components is provided by magnetoelectric switching in multiferroic – based systems using a low-energy electric field. Our work concerns the modelling of the Magneto Electric – Spin Orbital elements with an emphasis on the magnetoelectric component and simulation of magnetization reversal processes in a model system. The use of the proposed approach makes it possible to analyze the influence of dimensional factors (film thicknesses, transverse dimensions, sample shape) affecting the magnetic states of multiferroic nanoelements; taking into account interfacial interactions (magnetic anisotropy and interlayer exchange); energy-efficient external influences that allow switching magnetic states using magnetic and electric fields.
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