Abstract
The p–i–n heterojunction devices based on intrinsic absorber multiferroic Bi2FeCrO6 sandwiched between p-type NiO and n-type Nb-doped SrTiO3 were demonstrated.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
