Abstract
BiFe x Sn 1-x O 3 (x = 0 and 0.05) (BFSO-x) thin films were grown in situ on Pt/TiO 2 /SiO 2 /Si(100) substrates with a SrRuO 3 buffer layer by off-axis radio-frequency sputtering. The effects of Sn substitution on the multiferroic behavior of BFO thin films were investigated. The leakage current of BFSO-x thin films decreases substantially with the introduction of Sn. The BiFe x Sn 1-x O 3 (x = 0.05) thin film exhibits a lower dielectric loss (tan δ ∼ 0.013) and a much higher dielectric permittivity (e r ∼ 307) as compared with those of BFO thin films, together with the polarization of 2P r ∼ 108.5 μC/cm 2 . The fatigue endurance was greatly improved because of the suppression of oxygen vacancies caused by Sn substitution, while the magnetic behavior was degraded with the introduction of nonmagnetic Sn.
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