Abstract
Lithographic tool performance is the main contributor to CDU. The tool designers and users require an accurate method to measure the tool's error factors on the wafer side in order to improve CDU. Engineers typically use the FEM method to estimate DOF and EL, and then predict the CDU. However, based on the exposure data, it is often difficult to separate systematic level physical errors, such as DOSE repeatability, focus repeatability, dynamic errors and all the other tool's imperfections. In this paper, we introduce a wafer data based method to diagnose tool's performance for CDU improvement. As the systematic errors have a specific signature, they generate a fingerprint in the exposure data. Based on the knowledge of the exposure process and process flow, multiple dimensions exposure matrix is designed to analyze and diagnose the tool's systematic error from wafer data fingerprint. For SMEE's scanner tool (SSA600/10), we use this method to diagnose tool's systematic error and improve the CDU. Some typical result is represented in this paper.
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