Abstract
AbstractA technique for obtaining multidomain operation of Gunn diodes is proposed. Device impedance is increased, leading to large potential increases in output power. The precision required of the doping profile has been estimated by simulation and appears to be within the capabilities of molecular beam epitaxy. Estimates of output power, taking thermal effects into account, indicate that in many cases an N‐domain diode can produce N2 times as much power as a single‐domain diode. For example, it should be possible to obtain 1.8 W from a three‐domain device oscillating at 30 GHz.
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