Multi-cusp ion source for doping process of flat panel display manufacturing

Abstract

We developed a multi-cusp ion source for Nissin ion doping system iG5 which is used in low temperature poly-crystalline silicon processes for flat panel display (FPD) manufacturing. In this ion source, BF3 or PH3 diluted H2 plasmas are produced and large area ribbon ion beams are extracted. In general, ion ratio of B(+) in BF3 plasma is much smaller than BF2 (+) in multi-cusp ion sources. We developed a new method to increase B(+) ratio and obtained mass analyzed B(+) target current of 130 mA. We employed newly improved multi-slot type electrodes for the beam extraction system and obtained stable beams with the uniformity of below 3%. In BF3 plasmas, several undesirable metal fluorides are produced in the plasma chamber and deposited on the electrode system, which cause glitches and poor beam uniformity. We introduce several cleaning methods.