Abstract
Annealing treatments are an effective strategy to modulate trap depth and trap concentration in electronic materials. Herein, we have found that annealing in a weak reducing atmosphere is a good way to tailor the trap depth and trap concentration of the (LuYGd)(Al4Ga)O12:Ce3+,V3+ multicomponent phosphor. The characterization results show that the annealing atmosphere has no effect on the crystal structure and the photoluminescence peak position, but strengthens the trap depth and trap concentration. Especially, after annealing in a weak reducing atmosphere, the thermoluminescence (TL) integrated area of the phosphor is 7.46 times that of the unannealed phosphor, and the TL peaks obviously shift to a higher temperature region, which could be promoted to enhance optical information storage properties. Moreover, the peak position of photo-stimulated luminescence (PSL) is consistent with that of photoluminescence (PL), indicating that (LuYGd)(Al4Ga)O12:Ce3+,V3+ phosphor annealed in a weak reducing atmosphere possesses optical information read-in and read-out characteristics, and suggests that the multicomponent phosphor is a good candidate for optical information storage materials.
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