Abstract

White light-emitting diodes (W-LEDs) have been becoming the next generation of solid-state light sources. However, W-LED phosphors are dependent on rare earth doping. In this work, a Gd2O3:Bi3+ phosphor without rare earth doping to achieve multicolor luminescence was developed by a simple sol-gel method. Photoluminescence spectra were investigated for Gd2O3:Bi3+ at various annealing temperatures and various doping concentrations. The results show that Bi3+ doping does not cause the structural change of Gd2O3. The strongest emission peaks of the phosphor are located at 420 and 530 nm, corresponding to the 3P1→1S0 transition of Bi3+. The excited phosphors showed sharp blue emission peaks and broad yellow-green emission peaks, showing the overall characteristics of white emission. Under the excitation of UV chip, the LED device has excellent white-light emission performance. The non-toxic Bi3+ was used to realize W-LEDs devices, providing a new possibility for the development of LED as well as great practical significance in environmental protection.

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