Multicascade impact ionization in Si metal-insulator-semiconductor tunnel emitter auger transistor (Si mis teat)

Abstract

Abstract This article presents the analysis of the static characteristics of Si metal-insulator-semiconductor tunnel emitter Auger transistor. This study shows that there are some sharp rises of the differential current gain as a function of base-to-emitter voltage β d = f ( U BE ). These sharp rises appear for voltage intervals corresponding to the increase of the energy of tunneling electrons by the value of about the gap E g of Si. Violent retards of the base current I B increase correspond to these sharp rises; that indicates the appearance of an internal hole source. On this basis it was concluded that the multicascade Auger ionization had been possible in the collector space charge region and it had been produced by hot electrons tunneling from the emitter. Due to the considerable current gain ( β d = 700–900 at j >; 10 3 A cm −2 ), satisfactory technological reproducibility and probable good high-frequency characteristics, Si MIS TEAT seems to be a promising device for microelectronics.