MULTIBIT MEMORY CELL DESIGN USING MULTIPLE VALUED LOGIC

Abstract

The semiconductor market has been growing gradually over the long term, despite periodic troughs and peaks, and it is projected that this trend will continue in the years to come. The NAND Flash, which is designed for the data storage market, and the NOR Flash, which is addressing both the code and data storage segments due to its versatility, are the only types of Flash cells and architectures that can currently be considered industry standards. In this paper, a novel multibit flash memory cell is proposed. Multi valued logic allows for the storage of many bits in a single cell. The multilevel approach, where two bits are stored at the same level, should also be understood. The MultipleValued Logic system is one of the most promising approaches for achieving future beyond-binary electronics and systems. Multiple-valued logic can improve circuit connectivity, reduce chip space, and improve bus efficiency because more logic levels are used per line than in conventional binary logic. Mentor graphics software is used to assess the performance measures.