Abstract
A theoretical model has been developed for the electronic resonant Raman scattering processes in direct band zinc blende-type semiconductor quantum wells in a magnetic field. In order to take into account the spin-flip transitions, anomalous behavior of the Landau levels and the Landeg factor, an 8 38 Kane-Weiler Hamiltonian model has been considered for the evaluation of the Raman scattering amplitude. Elements concerning the selection rules of resonant inelastic light scattering in quantum well systems are reported. The multiband model predicts conditions for resonant spin-flip Raman processes in several light scattering con- figurations for crossed and parallel polarization. Special emphasis is given to the effects of the interlevel coupling and mixing within the conduction subband and their relation to spin-flip and inter-Landau level transitions. Symmetry and electronic properties of the level structure in the first conduction subband as well as anomalous Landefactors are discussed in terms of complementary Raman scattering configurations, Fermi energy, and multiband parameters.
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