Abstract
Giant steps with high uniformity and continuity have been successfully formed by metalorganic vapor-phase epitaxy on GaAs (1 1 1)A vicinal surfaces for the application of quantum wire fabrication. The step height is more than 30 monoatomic layer at a growth temperature of 660°C. The surface morphologies obtained from scanning electron microscopy and atomic force microscopy measurements show the straight steps on (1 1 1)A substrates misoriented toward [2̄ 1 1] direction with high uniformity. Terrace uniformity and step continuity are improved as the off-angle increases. A straight section of a step exceeding 10 μm was obtained on 4° off-substrate. Fluctuation has also been suppressed within 1 monoatomic layer height on this vicinal substrate.
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