Abstract
In a strong spin-orbit interaction system, the existence of three resistance states were observed when two ferromagnetic (FM) contacts were used as current terminals while a separate normal metal contact pair was used as voltage terminals. This result is strikingly different from ordinary spin valve or magnetic tunnel junction devices, which have only two resistance states corresponding to parallel (RP) and antiparallel (RAP) alignments of the FM contacts. Our experimental results on a quantum well layer with a strong Rashba effect clearly exhibit unequal antiparallel states, i.e., RAP(1) > RP > RAP(2), up to room temperature. The three-states are observed without any degradation when the distance between the non-magnetic voltage probe and the ferromagnetic current probe was increased up to 1.6 mm.
Highlights
This system consists of In0.52Al0.48As/In0.53Ga0.47As cladding layers and a 2-nm InAs quantum well acting as a two-dimensional electron gas
In the potentiometric geometry[18,19,20,21,22] shown in Fig. 1d, when the bias current is applied in the quantum well channel, the voltage is measured between the Ni81Fe19 electrode (FM) and the non-magnetic Ti/ Au electrodes (NM) at the end of the channel
When the magnetization direction of the ferromagnetic electrodes (FMs) is aligned with the majority spin direction in the channel, the high spin electrochemical potential
Summary
Three resistance states and a reciprocity of an electrochemical potential measurement have not yet been investigated experimentally in any channel system with spin-momentum locking. The bias current induces a spin potential in the channel i.e. the electrochemical potential split into two values for the up and down spin-polarized electrons.
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