Multi-scale electrical response of silicon nitride/multi-walled carbon nanotubes composites

Abstract

Dense silicon nitride (Si 3N 4) composites with various amounts (0–8.6 vol%) of multi-walled carbon nanotubes (MWCNTs) are electrically characterised by combining macroscopic dc–ac and nanoscale conductive scanning force microscopy (C-SFM) measurements. In this way, a coherent picture of the dominant charge transport mechanisms in Si 3N 4/MWCNTs composites is presented. A raise of more than 10 orders of magnitude in the electrical dc conductivity compared to the blank specimen is measured for MWCNTs contents above 0.9 vol%. Semiconductor and metallic-like behaviours are observed depending on both the temperature and the MWCNTs content. Macroscopic measurements are further supported at the nanoscale by means of C-SFM. The metallic-type conduction is associated to charge transporting along the nanotube shells, whereas the semiconductor behaviour is linked to hopping conduction across nanotube–nanotube contacts and across intrinsic defect clusters within the nanotubes.