Abstract
We report on electrically induced multi-resistance states in VO2/HfO2/VO2 heterostructures on silicon at room temperature. Through geometric confinement, the critical threshold voltage for the transition in each VO2 layer can be tuned, and this leads to sharp current jumps as each layer undergoes a conductance transition. Consistent results are obtained in both voltage and current sweep conditions. The ability to realize variable resistance states in correlated oxide heterostructures fabricated on silicon could be of relevance to emerging information processing and storage schemes utilizing functional oxides.
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