Abstract

A proposal for a phase gate and a Mølmer–Sørensen gate in the dressed state basis is presented. In order to perform the multi-qubit interaction, a strong magnetic field gradient is required to couple the phonon-bus to the qubit states. The gate is performed using resonant microwave driving fields together with either a radio-frequency (RF) driving field, or additional detuned microwave driving fields. The gate is robust to ambient magnetic field fluctuations due to an applied resonant microwave driving field. Furthermore, the gate is robust to fluctuations in the microwave Rabi frequency and is decoupled from phonon dephasing due to a resonant RF or a detuned microwave driving field. This makes this new gate an attractive candidate for the implementation of high-fidelity microwave based multi-qubit gates. The proposal can also be realized in laser-based set-ups.

Highlights

  • April 2015A proposal for a phase gate and a Mølmer–Sørensen gate in the dressed state basis is presented

  • In this manuscript, we introduce a scheme for a geometric gate σz ⨂ σz, and a Mølmer–Sørensen (MS) gate σx ⨂ σx in the dressed state basis for microwave-based implementations

  • Our scheme combines the gate operator and continuous dynamical decoupling which results in the gate being decoupled from the main fidelity damaging noise sources such as ambient magnetic field and Rabi frequency fluctuations

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Summary

April 2015

A proposal for a phase gate and a Mølmer–Sørensen gate in the dressed state basis is presented. The gate is robust to fluctuations in the microwave Rabi frequency and is decoupled from phonon dephasing due to a resonant RF or a detuned microwave driving field This makes this new gate an attractive candidate for the implementation of high-fidelity microwave based multi-qubit gates. A combination of the continuous techniques with gate operators has been proposed [10, 11] and realized [16, 17] for the laser-induced implementations In this manuscript, we introduce a scheme for a geometric gate σz ⨂ σz , and a Mølmer–Sørensen (MS) gate σx ⨂ σx in the dressed state basis for microwave-based implementations. We go on showing explicitly how our scheme could be implemented using laser rather than microwave radiation

Method
Derivation of the Hamiltonian
Calculating the neglected terms
Robustness to noise
Undesired effect of the RF driving field
Moving to the interaction pictures
Realization with lasers
Summary
Full Text
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