Multi-modulated optoelectronic memristor based on Ga2O3/MoS2 heterojunction for bionic synapses and artificial visual system

Abstract

With the development of artificial intelligence, the demand for brain-like intelligent devices capable of breaking the von Neumann bottleneck is growing. In light of the advantages of high speed, low power consumption, and high integration resulting from the combination of memory and underlying perception, the memristor has great potential for implementing bionic synapses and constructing artificial visual system. Herein, a Ga2O3/MoS2 heterojunction-based multi-modulated optoelectronic memristor (MMOM) is proposed and demonstrated. In response to specific electrical signals, the device empowers the emulation of synaptic functions including short/long-term plasticity and shows an adjustable modulation range through changing pulse parameters. Meanwhile, versatile optical signals are also able to evoke synaptic behaviors, for instance, the transition from short-term to long-term memory and the "learning-forgetting-relearning" function. Utilizing the excellent optical response, a 16 × 16 MMOM array is assembled to simulate the perception-memory integrated human visual system. Further, to optimize the static means of modulating bi-terminal visual synapses, a modulatory synapse exploiting varying positive and negative electrical signals is presented and validated. Predictably, a multi-signal engaged heterologous synapse can be constructed for the complex visual system, which greatly enriches the functionality of bionic synapses and offers the possibility to realize a dynamically tunable artificial visual system.