Multi-level Storage Characteristics of MoSe2 Resistive Random Access Memory

Abstract

Resistive Random Access Memory (RRAM) is a type of non-volatile memory (NVM) device that stores information by switching between high and low resistance values. It has attracted widespread attention due to its promising potential for miniaturization. In this study, molybdenum diselenide (MoSe2) was successfully synthesized via the hydrothermal method, and the RRAM was fabricated with MoSe2 as the resistance change layer. Furthermore, the MoSe2 samples were characterized by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results demonstrate that the prepared MoSe2 forms flower-like nanospheres assembled by nanosheets, with a particle size is about 200 nm. In addition, RRAM has a low operating voltage (< 1V), a high OFF/ON-state resistance ratio (> 102), a good endurance (103 cycles), and its resistance switching mechanism is dominated by the trap-controlled space charge limited current (SCLC) mechanism in the high resistance state (HRS) and by the ohmic mechanism in the low resistance state (LRS). Furthermore, multi-level storage is achieved by adjusting the compliance currents (Icc) and the stop voltage (Vstop).