Multi-level optical memory with logical operation modulated by surface barrier in a single CH3NH3PbI3 perovskite micro/nanowire device

Abstract

CH3NH3PbI3 is a potential candidate for optical information storage because of its excellent photoelectric response and hysteresis effect. However, the interface mechanism of the CH3NH3PbI3-based memory is still controversial, and the precise control of the resistive switching effect requires an effective method. Here, single CH3NH3PbI3 micro/nanowire devices with symmetric Ag electrodes were constructed. The role of the reversible redox reaction on the Ag electrode to modulate the interfacial barrier has been proposed, and the hysteresis behavior of the device can be precisely controlled by adjusting the illumination intensity and bias polarity. For example, when strong light and high voltage are applied at the same time, the device exhibits a symmetrical negative differential resistance effect; after being subjected to strong light and high voltage, the device exhibits a bipolar resistive switching effect, and the polarity of the large voltage determines the I-V curve wrapping way. On this basis, the device obtains multi-level optical storage and logic operation functions. This work provides a new way to understand the synergistic memory effect of light and bias on halide perovskite, which is expected to be further applied in the integrated field of optical nonvolatile memory and logical.