Abstract
Vanadium dioxide (VO2) is widely studied for its prominent insulator–metal transition (IMT) near room temperature, with potential applications in novel memory devices and brain-inspired neuromorphic computing. We report on the fabrication of in-plane VO2 metal–insulator–metal structures and reproducible switching measurements in these two-terminal devices. Resistive switching can be achieved by applying voltage or current bias, which creates Joule heating in the device and triggers the IMT. We analyze the current/voltage-induced resistive switching characteristics, including a pronounced intermediate state in the reset from the low to the high resistance state. Controllable switching behavior is demonstrated between multiple resistance levels over several orders of magnitude, allowing for multibit operation. This multi-level operation of the VO2-bridge devices results from exploiting sub-hysteresis loops by Joule heating.
Highlights
Inspired by the functions of biological neurons and synapses in the brain, the memristor,1 a two-terminal switchable resistive memory, becomes the main functional unit for energy-efficient neuromorphic computing circuitry
By applying voltage sweeps, which create Joule heating in the device and trigger the insulator–metal transition (IMT), we observed repeatable switching behavior with a correlation between the switching power and device dimensions
It shows a combination of digital switching and analog-like switching,13 and the reset happens gradually with steps, resulting in stable intermediate resistive states between the high resistive state (HRS) and the low resistive state (LRS)
Summary
Inspired by the functions of biological neurons and synapses in the brain, the memristor, a two-terminal switchable resistive memory, becomes the main functional unit for energy-efficient neuromorphic computing circuitry. The IMT can be tuned by chemical doping, epitaxial strain, and external stimuli, such as temperature and electrical current/voltage This makes VO2 a suitable material for memristive devices and the realization of artificial neurons.. By applying voltage sweeps, which create Joule heating in the device and trigger the IMT, we observed repeatable switching behavior with a correlation between the switching power and device dimensions It shows a combination of digital switching and analog-like switching, and the reset happens gradually with steps, resulting in stable intermediate resistive states between the high resistive state (HRS) and the low resistive state (LRS). We show multistate operation with a VO2-based two-terminal parallel-bridge device as an outlook, providing another versatile route to realize multistate memory
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