Abstract
Atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer resistive random access memory (RRAM) structure has been studied with a transparent indium tin oxide (ITO) transparent electrode. Highly stable and reliable multilevel conductance can be controlled by the set current compliance and reset stop voltage in bipolar resistive switching. Improved gradual resistive switching was achieved because of the interdiffusion in the HfO2/Al2O3 interface where tri-valent Al incorporates with HfO2 and produces HfAlO. The uniformity in bipolar resistive switching with Ion/Ioff ratio (>10) and excellent endurance up to >103 cycles was achieved. Multilevel conductance levels in potentiation/depression were realized with constant amplitude pulse train and increasing pulse amplitude. Thus, tri-layer structure-based RRAM can be a potential candidate for the synaptic device in neuromorphic computing.
Highlights
The physical limitation of the conventional flash memory gives rise to the development of resistive random access memory (RRAM) due to its low power consumption, higher density, and simple structure, which consist of mainly transition metal oxides sandwiched between the top and bottom electrodes [1,2,3,4,5,6]
A similar phenomenon has been indicated by Lui et al, where multilevel conductance was modulated by VReset-stop in Al2O3/HfO2/Al2O3 RRAM structure [21]
The proposed atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer RRAM structure with a transparent indium tin oxide (ITO) electrode has been studied in detail, which is believed to be more suitable for multilevel resistive switching
Summary
The physical limitation of the conventional flash memory gives rise to the development of resistive random access memory (RRAM) due to its low power consumption, higher density, and simple structure, which consist of mainly transition metal oxides sandwiched between the top and bottom electrodes [1,2,3,4,5,6]. Research has been focused on gaining low-power RRAM devices for symmetric SET/RESET behavior, gradual conductance change, and high synaptic density. Transition metal oxide, mainly based on Al2O3, HfO2, TaOx, ZrO2, TiO2, and their bilayer and tri-layer structure, was shown to be advantageous for industry-friendly electrical devices and improved multilevel resistive switching properties and its application towards synapses for neuromorphic computing [10,11,12,13,14,15,16]. The proposed atomic layer deposited (ALD) HfO2/Al2O3/HfO2 tri-layer RRAM structure with a transparent ITO electrode has been studied in detail, which is believed to be more suitable for multilevel resistive switching. For application in synaptic devices, multilevel conductance was achieved by applying both DC and pulse voltages
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