Abstract
A novel poly(azomethine) (PAM) thin film deposited by vapor deposition polymerization (VDP) process was used in the emissive layer of polymer light-emitting diodes (PLEDs). 1,4-Bis(4-formylstyryl)benzene (BFSB) and 4,4''-diamino-(1,1',4',1'')-terphenyl (DAT) were co-deposited to form PAM thin films at various substrate temperatures. Fluorescent quantum yield of novel PAM synthesized by using BFSB monomer increased one order of magnitude compared with the previous report. PLEDs with the device structure of indium–tin oxide (ITO)/poly(3,4-ethylene dioxythiophene) doped with poly(styrene sulfonic acid) (PEDOT:PSS) (100 nm)/PAM (140 nm)/LiF (0.5 nm)/Al (80 nm) exhibited of electroluminescence from the PAM layer for the first time. The characteristics of PLEDs suggest the electron mobility of PAM is higher than hole mobility.
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