Abstract

The research on anti-reflection (AR) optical thin film has long sought to obtain high-performance reflection and transmission properties in photovoltaic and photonic devices. The study of multi-layer AR (M-AR) film with low- and high-refractive-index materials is essential to increase the selective transmittance and reflectance at visible light wavelengths. However, M-AR film exhibits low substrate adhesion and slow deposition rates. We developed a DC pulse sputter system incorporating an inductively coupled plasma (ICP) source of high density to obtain high-quality M-AR film. Six-layer AR optical thin film was simulated using SiOx as a low-refractive-index material and NbOx as a high-refractive-index material. The multi-layer AR film based on SiOx and NbOx (M-SiNb) was fabricated using DC pulse sputtering which incorporated an ICP source. M-SiNb film exhibited better properties than the optical simulation results at 550 nm (transmittance: 99.19%, reflectance: 0.87%). Similarly, the M-SiNb film fabricated using the ICP source had high transmittance and reflectance in the visible light region and excellent adhesion to the substrate notwithstanding the various mechanical tests it was subjected to. Consequently, the development of the DC pulse sputter system included the ICP source, and this study represents important research in the field of optical film.

Highlights

  • The transmittance and reflectance of optical thin film can be adjusted in a specific wavelength range according to its purpose [1,2,3]

  • Common AR film consists of multi-layered film with alternating high- and low-refractive-index materials, typically making use of transparent materials such as SiO2, Nb2 O5, TiO2, MgF2, and indium-tin oxide (ITO) [5,6]

  • Forforthe source, it was observed that it has a smoother surface than the surface of source, it was observed that it has a smoother surface than the surface of NbOxx not using inductively coupled plasma (ICP) source

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Summary

Introduction

The transmittance and reflectance of optical thin film can be adjusted in a specific wavelength range according to its purpose [1,2,3]. Common AR film consists of multi-layered film with alternating high- and low-refractive-index materials, typically making use of transparent materials such as SiO2 , Nb2 O5 , TiO2 , MgF2 , and indium-tin oxide (ITO) [5,6] Among these AR film materials, the visible light range has been studied most due to the specific properties exhibited here. The AR film boasts a fast deposition rate and a uniform surface according to the increase in temperature of the electron beam [16,17,18,19,20,21] Binary materials such as oxides (SiOx and NbOx ) have poor hardness and wear resistance but this method reduces these properties. The results show that the fabricated sputter system and AR film can be used in optical lenses, camera lenses, smartphone displays, and solar cell applications

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