Abstract

In this paper we propose the use of U-grooved MOS capacitors to investigate oxides intended for U-grooved MOSFETs and IGBTs in silicon carbide. The UMOS capacitor uses only two mask layers, and has vertically etched walls and a gate contact that overlaps the step. We have manufactured UMOS capacitors in n-type 6H SiC with dry thermal gate oxides, and compared the capacitance voltage characteristics to those of flat reference capacitors. It was found that the general appearance of capacitance-voltage curves was unchanged by the addition of the vertical grooves, although the leakage through the oxide was increased. The oxide thickness on the sidewalls was approximately the same as on the flat parts of the devices.

Highlights

  • The purpose of modern VLSI manufacturing industry is achieving high speed operation, high density integration and economy

  • The physical size of VLSI chips will not increase proportionally as the number of the gates increases owing to super fine line interconnection on the silicon chip

  • Two mil line 2 layers hybrid, referring to B, can minimize the propagation delay on interconnections between silicon chip. This becomes most evident in the pin number range over 120, referring to VLSI

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Summary

INTRODUCTION

The purpose of modern VLSI manufacturing industry is achieving high speed operation, high density integration and economy. 0 20 40 60 80 l.O0 120 140 160 180 PINS / DEVICE FIGURE Occupied area by different types of chip dice containers. Two mil line 2 layers hybrid, referring to B, can minimize the propagation delay on interconnections between silicon chip. This becomes most evident in the pin number range over 120, referring to VLSI. 6) Firing the paste material attached to the substrate 4) Filling a paste for thick-film circuit use into the openings from which the photosensitive resin was removed. These are aggressive researchers and they are pioneers in this field

Etching Fired Thick Film
Fireable Thin Film
F I RE T I MES 5
Practical 2 Mil Line System Usage
CONCLUSION
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