Abstract
The characteristics of X-ray Diffraction (XRD), Current (I)-Voltage (V), and the Polarization-Electric field (P-E) on the BiFeO3 (BFO), BaTiO3 (BTO), and our proposed Multi-Layer (ML) BiFeO3/BaTiO3 (BFO/BTO) samples are studied systemically. The influence of these films with and without different external Magnetic (Mex.) inputs is also investigated. Our proposed multi-ferroic ML BFO/BTO sample has a lower tunneling current (Jg) (~5 × 103 times) and a stronger magneto-electric effect (an ~25 times higher value of the change of saturated polarization Ps with the Mex. inputs than the pure multi-ferroic BFO sample. The material properties for ML BFO/BTO samples can be optimized with the combination of the advantages of BFO and BTO thin films. The stronger magneto-electric effect in our proposed ML samples can have many applications such as magnetic sensors, magnetic electric devices, and logic Magneto-Electric Spin–Orbit (MESO) devices.
Highlights
With the growth and the recent development of magnetic sensors [1,2], magnetic electric devices [3,4], and logic Magneto-Electric Spin–Orbit (MESO) devices [5,6], a multiferroic material with a good ferroelectricity, low tunneling current (Jg ), and strong magnetoelectric effect is needed urgently
We investigated the material properties of pure ferroelectric BaTiO3 (BTO) and pure multi-ferroic BiFeO3 (BFO) thin films separately [7,8]
The lower Jg and the higher response of Ps with different Mex. inputs and the value of αME were found in our proposed ML BFO/BTO structures compared to the pure multiferroic BFO thin-film sample
Summary
With the growth and the recent development of magnetic sensors [1,2], magnetic electric devices [3,4], and logic Magneto-Electric Spin–Orbit (MESO) devices [5,6], a multiferroic material with a good ferroelectricity, low tunneling current (Jg ), and strong magnetoelectric effect is needed urgently. We investigated the material properties of pure ferroelectric BaTiO3 (BTO) and pure multi-ferroic BiFeO3 (BFO) thin films separately [7,8]. In order to meet the different requirements for different kinds of applications in magneto-electric spin devices, we propose to use the Multi-Layer (ML) BFO/BTO thin-film structures to optimize the multi-ferroic material properties [7,8]. Novel MLs comprising different ferroelectric/multi-ferroic materials have been intensively studied to find better systems with superior electrical and ferroelectric properties having strong coupling and interaction among the layers. Sharma [9] discussed the stress effect to enhance the polarization in the ML BFO/BTO structure for application in energy storage devices. The characteristics of the Polarization-Electric field (P-E) curves with and without different external
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