Multi-factors-regulated multi-level down-scalable and robust memristors

Abstract

The memristor based on resistive switching (RS) behavior has attracted extensive attention due to its wide application prospects in artificial intelligence (AI) and information memory. In this work, a multi-factor responsive memristor based on Ag/MnO2/F-doped tin oxide (FTO) sandwich structure was fabricated by magnetic sputtering method. It was found that the RS behavior of the device was significantly improved when the diameter of the top electrode decreased from 2.0 mm to 0.5 mm, indicating that the device with Ag/MnO2/FTO structure has the down-scalable potential. Through comprehensive research, it can be concluded that the bipolar RS behavior of the memristor can be adjusted by multi-factors such as active layer thickness, top electrode size, voltage scanning rate, bias voltage amplitude and temperature. Specifically, the resistance-temperature dependence and temperature coefficient of the device in the low resistance state (LRS) indicate that the formation and disconnection of metallic Ag conductive filaments (CFs) play an important role in the RS behavior of the memristive device. Therefore, this work will lay an experimental and theoretical foundation for comprehensively understanding the mechanism of RS behavior and developing high-performance memristor with multi-level memory capacity.