Abstract
AbstractA multi‐color light emitting diode (LED) using two distinct active regions connected via a tunnel junction was grown by rf‐plasma‐assisted molecular beam epitaxy. The LED is contacted through n‐type layers, one of which provides efficient contact to a p‐type layer via a second tunnel junction. The tunnel junctions used in the structure use the high polarization fields found in the III‐nitrides material system to narrow the depletion width of the junction. Two peaks at 405 nm and 490 nm are observed in the electroluminescence spectrum of the LED, and current‐voltage characteristics indicate a turn‐on voltage of roughly 7.5 V and dynamic series resistance of 19 Ω at 80 mA for a 300 μm square device. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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