Abstract
Graphene has attracted great attention in the field of optoelectronic application owing to its excellent electrical and optical properties. This paper reports a multi-channels electrode parallel structure monolayer pure graphene photodetector and it is verified that the device with this structure can obtain higher performance, larger photocurrent amplitude and smaller device resistance without adding additional manufacturing processes. During the measurement, the laser covers the whole surface of the device to simulate the actual operating conditions, which reveals the feasibility of using graphene photodetector with multi-channels parallel structure for the actual application. By adjusting the bias voltage, the photo responsivity of the photodetector can reach A/W level, which is much higher than the pure graphene photodetectors reported in previous research (a few mA/W). The reported novel electrode structure for graphene field transistor can be provide great opportunities for future graphene detectors.
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