Abstract
Bottom-gate multi-channel ferroelectric-gate field effect transistors (FETs) based on ZnO nanofibers were fabricated, using Bi3.15Nd0.85Ti3O12 (BNT) thin film as the gate insulator and ZnO nanofibers as the semiconductor multi-channel. The electrical characteristics of the multi-channel ZnO nanofiber ferroelectric-gate FETs showed typical p-channel transistor properties with a low threshold voltage of −0.5 V, a high effective field effect mobility, and a large on/off current ratio of 104. These excellent performances are attributed to the multi-channel ZnO nanofiber and BNT ferroelectric-gate insulator.
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