Abstract
ABSTRACT In this paper, we describe a multi-bit programming technique for a metal-ferroelectric-insulator-semiconductor field-effect-transistor (MFIS-FET) to increase the memory capacity of ferroelectric random access memory (FeRAM). We fabricated a p-channel MFIS-FET using (Bi, Nd)4Ti3O12 film as a ferroelectric and HfO2 film as an insulator. The multi-bit data is programmed by controlling the local polarization (minor loop) of three regions of the ferroelectric layer in the channel of the MFIS-FET. We controlled the polarizations of the ferroelectric film near the source, near the channel, and near the drain regions by separately applying programming pulses to the gate, source, drain, and Si substrate, which changed the threshold voltage and drain current of the MFIS-FET. In this study, two-bit data are programmed in one MFIS-FET, and drain currents corresponding to data “0”, “1”, “2”, and “3” are obtained.
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