Abstract
This paper considers multi-biasing conditions for graphene patterns in multi-layer structures. The term “Multi Bias” is introduced as a different bias for parts of a single graphene layer in shape of disks. This technique is developed to control device behavior versus THz radiation. Exploiting the multi-bias configuration, a unique structure acts as both narrowband absorber and wideband reflector. This feature can pave the way to realize complex THz sensors, detectors, and optical systems. Also, the proposed structure is modeled using circuit modeling by considering the multi bias effects. Accuracy of the circuit model is validated via the finite element method which exhibits less than 1% error. Ample simulations are performed to investigate device sensitivity regarding layers thickness, electron relaxation time and biasing condition. Based on theoretical description and simulation results the proposed device can be considered as a reconfigurable absorber/reflector in the THz spectrum while bias values determine operation mode.
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