Abstract
To overcome the throughput limitations in electron beam nanolithography, a multi beam system is proposed. Theoretical considerations show that this e-beam comb-probe printer with 1024 probes will be capable of combining 25 nm resolution with a maximum beam current of 5 µA. This allows an exposure speed of 0.1 cm2/s, which is orders of magnitude superior to today's most advanced equipment. In addition, the multi beam principle is considered for nanometer pattern inspection and for ion-beam techniques. The basic concepts for these applications are presented. Practical feasibility investigations are the subject of current research.
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