Abstract
The effects of polar optical phonon (POP) scattering and interface-roughness (IR) scattering on the current of GaAs/AlAs resonant tunneling diodes (RTDs) are simulated based on a multi-band, non-equilibrium Green's function method. Space charge effect is also taken into account by solving the Poisson's equation self-consistently. As a result, we have found that the multiband nature and space charge effects significantly change the results of conventional RTD simulations and the POP scattering has a more significant effect on the valley current than IR scattering.
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