Abstract
Silicon quantum dots embedded in an amorphous matrix of silicon carbide were realized bya magnetron co-sputtering process and post-annealing. X-ray photoelectron spectroscopy,glancing x-ray diffraction, Raman spectroscopy and high-resolution transmission electronmicroscopy were used to characterize the chemical composition and the microstructuralproperties. The results show that the sizes and size distribution of silicon quantum dots canbe tuned by changing the annealing atmosphere and the atom ratio of silicon and carbon inthe matrix. A physicochemical mechanism is proposed to demonstrate this formationprocess. Photoluminescence measurements indicate a multi-band configuration due to thequantum confinement effect of silicon quantum dots with different sizes. ThePL spectra are further widened as a result of the existence of amorphous siliconquantum dots. This multi-band configuration would be extremely advantageousin improving the photoelectric conversion efficiency of photovoltaic solar cells.
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