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Abstract
Nowadays the increasing demand of high-efficiency power devices for automotive framework, forced the scientific community to develop new technologies capable to operate under intense power loads. Among the broad scenario SiC-based substrates represent a promising solution. This study focuses on a high-speed thermal characterization of a power module designed by STMicroelectronics (ACEPACK DRIVE) with the aim to provide a map of the temperature values reached at the surface upon current-pulse stresses. Thermal images collected on one leg show a symmetrical temperature distribution, with a maximum of around 60 °C on the device metals and ensures that any reliability issues due to the thermo-mechanical stress are avoided.
Published Version
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