Abstract

Conventional spectroscopic ellipsometry is a powerful tool in optical metrology. However, when it comes to the characterization of non-periodic nanostructures or structured fields that are much smaller than the illumination spot size, it is not well suited as it integrates the results over the whole illuminated area. Instead, imaging ellipsometry can be applied. Especially imaging Mueller matrix ellipsometry is highly useful in nanostructure characterization and defect inspection, as it is capable to measure the complete Mueller matrix for each pixel in a microscope image of the sample. It has been shown that these so-called Mueller matrix images can help to distinguish geometrical features of nanostructures in the sub-wavelength regime due to visible differences in off-diagonal matrix elements. To further investigate the sensitivity of imaging Mueller matrix ellipsometry for sub-wavelength sized features, we designed and fabricated a sample containing geometrical nanostructures with lateral dimensions ranging from 50 to 5,000 nm. The structures consist of square and circular shapes with varying sizes and corner rounding. For the characterization of their Mueller matrix images, we constructed an in-house Mueller matrix microscope capable of measuring the full Mueller matrix for each pixel of a CCD camera, using an imaging system and a dual-rotating compensator configuration for the ellipsometric system. The samples are illuminated at 455 nm wavelength and the measurements can be performed in both transmission and reflection. Using this setup, we systematically examine the sensitivity of Mueller matrix images to small features of the designed nanostructures. Within this contribution, the results are compared with traceable atomic force microscopy measurements and the suitability of this measurement technique in optical nanometrology is discussed. AFM measurements confirm that the fabricated samples closely match their design and are suitable for nanometrological test measurements. Mueller matrix images of the structures show close resemblance to numerical simulations and significant influence of sub-wavelength features to off-diagonal matrix elements.

Highlights

  • When it comes to nanostructure characterization via optical metrology, spectroscopic ellipsometry is one of the most powerful and versatile tools available today [1,2,3,4,5,6,7]

  • We presented our imaging Mueller matrix ellipsometry setup which we constructed and tested on specially designed nanostructures to further investigate in the link between geometrical features and off-diagonal Mueller matrix elements

  • Our setup features a microscopy mode that allows for reflection measurements at perpendicular incidence without major reconstructions of the setup

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Summary

Introduction

When it comes to nanostructure characterization via optical metrology, spectroscopic ellipsometry is one of the most powerful and versatile tools available today [1,2,3,4,5,6,7]. Mueller matrix ellipsometry, which measures all polarizing properties of the sample under investigation and summarizes them in a 4 by 4 Mueller matrix, is a useful method in layer composition characterization or the retrieval of geometrical parameters of periodic nanostructures [8,9,10]. Conventional spectroscopic ellipsometry meets its limits regarding measurements of structured fields smaller than the illumination spot. The measurement signal is usually integrated over the whole illuminated area on the sample. When the structured fields are inherently smaller than the illumination spot, unwanted signals from the surrounding disturb the measurement signal and lead to distorted results. The integrated Mueller matrix of an individual, nonperiodic nanostructure can barely be distinguished from one measured on the substrate alone

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