Abstract
In this study, the Mueller matrix of all-dielectric Pancharatnam–Berry (PB)-phase metasurfaces was retrieved using finite-difference time-domain (FDTD) simulation, Stokes–Mueller calculus, and Lu–Chipman decomposition. The polarization properties are discussed for nanofin-shaped PB-phase metasurfaces made of GaN and Nb2O5 and L-shaped PB-phase metasurfaces made of GaN. The results show that both the nanofin-shaped and L-shaped PB-phase GaN metasurfaces are optically equivalent to a linear-diattenuating retarder, and the nanofin-shaped PB-phase Nb2O5 metasurface is optically equivalent to a linear phase retarder. The PB-phase GaN metasurface exhibits stronger diattenuation and lower transmittance than the Nb2O5 metasurface due to the inherent defect absorption in the visible range. With a similar refractive index but barely any absorption, Nb2O5 is a more suitable material for PB-phase metasurfaces in the visible range than GaN.
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