Abstract
We demonstrate the magnetization reversal in magnetic tunnel junction (MTJ) spin-valves (SV) based on thin films and nanowires. We show the change of coercive force and magnetization direction of the soft magnetic layer at transition from a continuous film to a laterally confined nanostructure formed by focused ion beam technique. We discuss the possible mechanisms of coercivity and magnetic anisotropy transformations in nanowire spin-valves. Micromagnetic simulation of spin configuration gives the stripe domain structure in the soft layer of the nanowires, which defines magnetization reversal mechanism via domain wall displacement. SVs based on the continuous thin film have tunnel magnetoresistance (TMR) ratio about 20%, which is suitable for emerging nanoelectronic applications.
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