Abstract
Investigation of time characteristics of silicon avalanche detectors with negative feedback based on Metal-Resistive layer-Semiconductor structure, proposed for Time-of-Flight systems, is described in this paper. Time resolutions of 550 ps on β-electrons and 250 ps on LED light pulses were obtained. Design and principles of operation are described briefly.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
